Ratewindow plot for traps in GaN etched in potassium hydroxide and regrown with MOCVD.
|
Arrhenius plot of traps in GaN etched by potassium hydroxide and regrown with metal organic chemical vapor deposition.
|
Ratewindow plot of the defects in SiC for various carbon to silicon ratios used during epitaxial growth.
|
Arrhenius plot of the defects in SiC. Note the close spacing of energy levels, resolved by fitting of the exponential capacitance transients for multiple components.
|
User interface for generating ratewindow plots. The user can select the sample times and simply view the plot, or view and save the plot. Other tabs are used for fitting individual transients, or fit all of the transients.
|
User interface for transient fitting results analysis in an Arrhenius plot. The user can filter out poorly fit points, e.g. where there was no transient, and select points to include in the energy and capture cross section calculation. Points can be saved in a file.
|
