DLTS


Semetrol's Deep Level Transient Spectroscopy system is designed to obtain detailed results very efficiently. Place the probes on your sample, test various measurement conditions, and then start measuring. Measurements may be made very quickly for a survey of traps, or with more extensive transient averaging for very high sensitivity. The entire transient is recorded at each temperature step, so there is no need for repeated temperature scans as with conventional boxcar averaging or correlators.


Installation includes training, an extensive manual with examples, and on-line instructions that will allow a new user to produce results quickly with thermal spectroscopy. The data acquisition interface allows the user to set up measurements and see the results of changes in the measurement conditions very quickly. Similarly, the data analysis software performs the tasks very efficiently, automatically generating rate windows over the widest range possible, and automatically finding peaks.


DLTS uses a semiconductor structure in which there is a region that is depleted of mobile charges, and measurement conditions may be changed to allow trapping of carriers. The most straightforward method is to use a diode and decrease the width of the depletion region to fill traps that may be present, followed by an increase in the depletion width and measure the rate of emission of the trapped charges.


With the full data set available, post processing can be done in a number of different ways, with user-selected degrees of noise filtering. Analysis includes rate window peak detection, Gaussian deconvolution and transient fitting. Peak detection finds the highest peaks and plots the results on an Arrhenius plot for the energy and capture cross section. Gaussian deconvolution can be used for more detailed fits of the rate window spectra for multiple components. Transient fitting analyzes the data in the time-domain, extracting multiple emission rates.


DLTS Arrhenius Plot
DLTS rate window spectra

Several spectra from deep level defects in GaN with the emission rates, or rate windows, listed in the upper right.

Energy and capture cross section are determined from an Arrhenius plot of T2/e versus 1/kT. The Arrhenius points are generated automatically.

DLTS Arrhenius plot