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Semetrol's Deep Level Transient Spectroscopy system is designed to obtain detailed results very efficiently. Installation
includes training, as well as an extensive manual, and on-line instructions that will allow a new user to produce results
quickly. The data acquisition interface allows the user to set up measurements and see the results of changes in the measurement
conditions very efficiently. Similarly, the data analysis software performs the necessary tasks very quickly, from fully automated
to semiautomated. DLTS uses a semiconductor structure in which there is a region that is depleted of mobile charges,
and measurement conditions may be changed to allow trapping of carriers. The most straightforward method is to use a diode
and decrease the width of the depletion region to fill traps that may be present, and increase the depletion width and measure
the rate of emission of the trapped charges. A brief introduction to the background is presented below, along
with an introduction to the programs used in data collection and analysis.
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The figures, from left to right, describe the steady state conditions, the trap filling conditions, and the measurement
conditions, respectively. In this case, the device is an n-type Schottky diode. Under steady state conditions, the traps
at ET have all been emptied of charges. The dashed horizontal line is the Fermi level position. An energy level
at the Fermi position has a 50% chance of being occupied. Below the Fermi level, the traps are mostly occupied. Above the
Fermi level, the traps are mostly empty. A voltage is applied to move the Fermi level towards the conduction band, bringing
the Fermi level above the energy of the traps in the region that was depleted of charges. A voltage is then applied that widens
the depletion region. The trapped charges are emitted when avoltage is applied that brings the Fermi level below the energy
of the traps in the depletion region. The emission is measured as a change in capacitance.
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A peak is generated from the transients
as described in the graph. The difference in capacitance at the sampling points
is small at low temperatures (bottom), increases at intermediate temperatures, and decreases again at high temperatures (top),
resulting in the formation of a peak in a plot of the spectrum of traps, known as the ratewindow plot.
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You can quickly see the effect of changes in measurement conditions during setup. Once the conditions are acceptable, the
temperature range, step size, file name and other information is entered, and the measurements are automated once the user
presses 'Start'. The number of transients averaged together can also be set by the user to obtain either a quick scan
or a very sensitive data collection. The user also has control over the temperature stabilization, setting a small stabilization
count for a quick scan, or longer for more accurate results. The manual explains how to optimize the measurement conditions,
including the temperature stabilization, for accuracy and precision. The measurements are extremely sensitive. Transients
with amplitude less than 0.5 fF can be measured routinely.
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Ratewindow analysis is done either automatically, or semi-automatically. The analysis program plots the ratewindow, and the
user selects a range of temperatures for peaks of interest. The program finds the peak positions automatically, and generates
the Arrhenius plot for energy and capture cross section calculations. Several ratewindows are generated automatically. The
user then uses a cursor to select points to include in the Arrhenius analysis. The process takes only a few minutes.
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An alternative method of analysis fits each transient for exponential components. This method is very useful when
there are trap signals overlapping in the same temperature range. However, it requires a relatively strong signal. Ratewindow
analysis is more sensitive for low level signals. Both are provided. The analysis program includes several windows:
3D plot of all data, ratewindow plot for saving, ratewindow analysis, comparison of simulation to ratewindow data, fit individual
transients, fit all transients and save fit values.
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The data acquisition program and analysis programs are the result of several years of use in providing commercial
services. There are also several utility programs included that have proven essential in validating device suitability, measurement
conditions, and results. Semetrol's DLTS system is a complete, advanced characterization system that is ready to
produce results immediately on installation; feedback to optimize semiconductor material growth conditions, publications,
progress reports for grants and contracts, and to provide valuable results for proposals with strong impact.
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