The different components in forward bias are distinguishable by their ideality factor (n): n=1 for thermionic emission (TE), n=2 for generation/recombination (GR), and relatively insensitive to temperature for tunneling by field emission or thermionic field emission (FE-TFE). Once the dominant mechanism is identified from the ideality factor, a fit for all components is performed. The fitting process determines saturation current values for each of the conduction components, characteristic tunneling energy, the series resistance and shunt resistance. A semilog plot of the relevant saturation current versus 1/kT (Arrhenius plot) yields the energies of the barriers involved in each conduction mechanism from the slope. Analysis of the reverse bias current is straight forward from an Arrhenius plot of the current at each bias.
Reverse bias analysis consists of plotting the data in an Arrhenius plot of I/T2 vs 1/kT for each measurement temperature. The change in energy with measurement bias (electric field) provides information on the potential profile of the rate-limiting step in the generation process.
The system manual describes the steps involved in measuring semiconductor transport characteristics using IVT measurements. The instructions include detailed information on how to load the sample, establish the initial measurement conditions, acquire the data, and analyze the data. Simulation software is also described.
IVT includes Current-DLTS (I-DLTS). I-DLTS is used for high resistivity semiconductors. I-DLTS also includes optical filling pulse capabilities for photo-induced current transient spectroscopy (PICTS).
IVT provides information complementary to DLTS and TAS measurements. DLTS and TAS provide the spectrum of defects, but don't indicate directly which defects are most responsible for device limitations. IVT measures the conduction mechanism and associated energy of the defect that is limiting the efficiency of devices such as solar cells, photodetectors, lasers, and transistors.